Oxford Plasmalab 80+ (Plasma 80)

RF discharge tool for etching thin films. Some metals are allowed, after communication with the NanoLab staff.
• Process pressure 5-150 mbar
• Gas inlet system for process pressure control and gas mixtures
• Gasses; CHF3, SF6, O2, Ar
• Max 300 W for Reactive Ion Etching (RIE)
• Max 300 W for Inductive Coupled Plasma (ICP)
• ICP gives independent ion energy control
• Laser Interferometer endpoint detection
• Max size 90 mm diameter