Oxford PlasmaPro100 ICPECVD (ICPECVD)

Inductively coupled plasma-enhanced chemical vapor deposition tool. Allows for the deposition of thin conformal layers of different materials

• gas control system for pressure controle and gas mixtures by flow gasses; SiH4, Ar, CH4, N2O, O2, N2, H2, SF6
• 300W RF generator
• 3 kW ICP RF generator
• Electrode temperature range 5°C to +400°C
• 4” wafer clamping with helium assisted heat transfer
• vacuum system; 1600 l/s turbo pump with a dry prevacuum pump
• scrubber for toxic gases
• combined loadlock system via cleanroom interface for the RIE/ICP etch Cobra and the ICPCVD system